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Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETs

dc.contributor.authorRafi, J.M.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorHayama, K.
dc.contributor.authorCampabadal, F.
dc.contributor.authorOhyama, H.
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-16T18:52:38Z
dc.date.available2021-10-16T18:52:38Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12750
dc.sourceIIOimport
dc.titleElectrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETs
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage2081
dc.source.endpage2084
dc.source.journalMicroelectronic Engineering
dc.source.issue9_10
dc.source.volume84
imec.availabilityPublished - open access
imec.internalnotesPaper from INFOS 2007


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