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Achieving conduction band-edge effective work functions by La2O3 capping of hafnium silicates

dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorChang, Vincent
dc.contributor.authorYu, HongYu
dc.contributor.authorCho, Hag-Ju
dc.contributor.authorConard, Thierry
dc.contributor.authorYin, KaiMin
dc.contributor.authorDelabie, Annelies
dc.contributor.authorSwerts, Johan
dc.contributor.authorSchram, Tom
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorBiesemans, Serge
dc.date.accessioned2021-10-16T18:54:25Z
dc.date.available2021-10-16T18:54:25Z
dc.date.issued2007-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12755
dc.sourceIIOimport
dc.titleAchieving conduction band-edge effective work functions by La2O3 capping of hafnium silicates
dc.typeJournal article
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage486
dc.source.endpage488
dc.source.journalIEEE Electron Device Letters
dc.source.issue6
dc.source.volume28
imec.availabilityPublished - imec


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