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Study of the relaxation of strain in patterned Si/SiGe structures using an x-ray diffraction technique

dc.contributor.authorRehman Khan, Aaliya
dc.contributor.authorStangl, J.
dc.contributor.authorBauer, G.
dc.contributor.authorBuca, D.
dc.contributor.authorHolländer, B.
dc.contributor.authorTrinkhaus, H.
dc.contributor.authorMantl, S.
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-16T18:59:54Z
dc.date.available2021-10-16T18:59:54Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12772
dc.sourceIIOimport
dc.titleStudy of the relaxation of strain in patterned Si/SiGe structures using an x-ray diffraction technique
dc.typeJournal article
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpageS212
dc.source.endpageS215
dc.source.journalSemiconductor Science and Technology
dc.source.issue1
dc.source.volume22
imec.availabilityPublished - open access


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