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Calibrated wafer-level HBM measurements for quasi-static and transient device analysis

dc.contributor.authorScholz, Mirko
dc.contributor.authorThijs, Steven
dc.contributor.authorLinten, Dimitri
dc.contributor.authorTremouilles, David
dc.contributor.authorSawada, Masanori
dc.contributor.authorNakaei, T.
dc.contributor.authorHasebe, Takumi
dc.contributor.authorNatarajan, M.I.
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-16T19:29:05Z
dc.date.available2021-10-16T19:29:05Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12857
dc.sourceIIOimport
dc.titleCalibrated wafer-level HBM measurements for quasi-static and transient device analysis
dc.typeProceedings paper
dc.contributor.imecauthorThijs, Steven
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecThijs, Steven::0000-0003-2889-8345
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.source.peerreviewno
dc.source.beginpage89
dc.source.endpage94
dc.source.conferenceEOS/ESD Symposium Proceedings
dc.source.conferencedate16/09/2007
dc.source.conferencelocationAnaheim, CA USA
imec.availabilityPublished - imec


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