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Arsenic junction thermal stability and high-dose boron-pocket activation during SPER in nMOS transistors

dc.contributor.authorSeveri, Simone
dc.contributor.authorPawlak, Bartek
dc.contributor.authorDuffy, Ray
dc.contributor.authorAugendre, Emmanuel
dc.contributor.authorHenson, Kirklen
dc.contributor.authorLindsay, Richard
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-16T19:36:51Z
dc.date.available2021-10-16T19:36:51Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12880
dc.sourceIIOimport
dc.titleArsenic junction thermal stability and high-dose boron-pocket activation during SPER in nMOS transistors
dc.typeJournal article
dc.contributor.imecauthorSeveri, Simone
dc.contributor.imecauthorPawlak, Bartek
dc.contributor.imecauthorDe Meyer, Kristin
dc.source.peerreviewno
dc.source.beginpage198
dc.source.endpage200
dc.source.journalIEEE Electron Device Letters
dc.source.issue3
dc.source.volume28
imec.availabilityPublished - imec


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