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Dielectric quality and reliability of FUSI/HfSiON devices with process induced strain

dc.contributor.authorShickova, Adelina
dc.contributor.authorKaczer, Ben
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVerheyen, Peter
dc.contributor.authorEneman, Geert
dc.contributor.authorJurczak, Gosia
dc.contributor.authorAbsil, Philippe
dc.contributor.authorMaes, Herman
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-16T19:40:29Z
dc.date.available2021-10-16T19:40:29Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12890
dc.sourceIIOimport
dc.titleDielectric quality and reliability of FUSI/HfSiON devices with process induced strain
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1906
dc.source.endpage1909
dc.source.journalMicroelectronic Engineering
dc.source.issue9_10
dc.source.volume84
imec.availabilityPublished - open access
imec.internalnotesPaper from INFOS 2007


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