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NBTI reliability of Ni FUSI/HfSiON gates: effect of silicide phase

dc.contributor.authorShickova, Adelina
dc.contributor.authorKaczer, Ben
dc.contributor.authorVeloso, Anabela
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorHoussa, Michel
dc.contributor.authorMaes, Herman
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorKittl, Jorge
dc.date.accessioned2021-10-16T19:40:52Z
dc.date.available2021-10-16T19:40:52Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12891
dc.sourceIIOimport
dc.titleNBTI reliability of Ni FUSI/HfSiON gates: effect of silicide phase
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.source.peerreviewno
dc.source.beginpage505
dc.source.endpage507
dc.source.journalMicroelectronics Reliability
dc.source.issue4_5
dc.source.volume47
imec.availabilityPublished - imec
imec.internalnotesPaper from WoDiM 2006


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