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Tensile strained Ge layers grown on compositionally step-graded Ge1-xSnx buffer layers

dc.contributor.authorShimura, Yosuke
dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorSakai, Akira
dc.contributor.authorNakatsuka, Osamu
dc.contributor.authorOgawa, Masaki
dc.contributor.authorZaima, Shigeaki
dc.date.accessioned2021-10-16T19:42:30Z
dc.date.available2021-10-16T19:42:30Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12895
dc.sourceIIOimport
dc.titleTensile strained Ge layers grown on compositionally step-graded Ge1-xSnx buffer layers
dc.typeProceedings paper
dc.source.peerreviewno
dc.source.beginpage29
dc.source.endpage30
dc.source.conference3rd International Workshop on New Group IV Semiconductor Nanoelectronics
dc.source.conferencedate8/11/2007
dc.source.conferencelocationSendai Japan
dc.identifier.urlhttp://www.murota.riec.tohoku.ac.jp/SiGeC2007/
imec.availabilityPublished - imec


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