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On the origin of the excess low-frequency noise in graded-channel silicon-on-insulator nMOSFETs

dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorChung, T.M.
dc.contributor.authorFlandre, D.
dc.contributor.authorRaskin, J.P.
dc.date.accessioned2021-10-16T19:45:29Z
dc.date.available2021-10-16T19:45:29Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12904
dc.sourceIIOimport
dc.titleOn the origin of the excess low-frequency noise in graded-channel silicon-on-insulator nMOSFETs
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage919
dc.source.endpage921
dc.source.journalIEEE Electron Device Letters
dc.source.issue10
dc.source.volume28
imec.availabilityPublished - open access


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