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Characterisation of high-energy proton irradiation induced recombination centers in silicon

dc.contributor.authorKaniava, Arvydas
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, C.
dc.contributor.authorGaubas, Eugenijus
dc.date.accessioned2021-09-29T14:37:57Z
dc.date.available2021-09-29T14:37:57Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1290
dc.sourceIIOimport
dc.titleCharacterisation of high-energy proton irradiation induced recombination centers in silicon
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage371
dc.source.endpage376
dc.source.conferenceProceedings of the 6th Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology - GADEST'95
dc.source.conferencedate2/09/1995
dc.source.conferencelocationBerlin Germany
imec.availabilityPublished - open access
imec.internalnotesSolid State Phenomena; Vols. 47-48


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