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Performance enhancement of Poly-Si/TiN/SiON based pMOSFETs by addition of an AlO capping layer

dc.contributor.authorSinganamalla, Raghunath
dc.contributor.authorYu, HongYu
dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorPetry, Jasmine
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorParaschiv, Vasile
dc.contributor.authorVolders, Henny
dc.contributor.authorKubicek, Stefan
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorBiesemans, Serge
dc.date.accessioned2021-10-16T19:49:57Z
dc.date.available2021-10-16T19:49:57Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12916
dc.sourceIIOimport
dc.titlePerformance enhancement of Poly-Si/TiN/SiON based pMOSFETs by addition of an AlO capping layer
dc.typeJournal article
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorParaschiv, Vasile
dc.contributor.imecauthorVolders, Henny
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.source.peerreviewno
dc.source.beginpage1865
dc.source.endpage1868
dc.source.journalMicroelectronic Engineering
dc.source.issue9_10
dc.source.volume84
imec.availabilityPublished - imec
imec.internalnotesPaper from INFOS


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