Effective work-function modulation by aluminum-ion implantation for metal-gate technology (poly-Si/TiN/SiO2)
dc.contributor.author | Singanamalla, Raghunath | |
dc.contributor.author | Yu, HongYu | |
dc.contributor.author | Van Daele, Benny | |
dc.contributor.author | Kubicek, Stefan | |
dc.contributor.author | De Meyer, Kristin | |
dc.date.accessioned | 2021-10-16T19:50:19Z | |
dc.date.available | 2021-10-16T19:50:19Z | |
dc.date.issued | 2007 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/12917 | |
dc.source | IIOimport | |
dc.title | Effective work-function modulation by aluminum-ion implantation for metal-gate technology (poly-Si/TiN/SiO2) | |
dc.type | Journal article | |
dc.contributor.imecauthor | Kubicek, Stefan | |
dc.contributor.imecauthor | De Meyer, Kristin | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | no | |
dc.source.beginpage | 1089 | |
dc.source.endpage | 1091 | |
dc.source.journal | IEEE Electron Device Letters | |
dc.source.issue | 12 | |
dc.source.volume | 28 | |
imec.availability | Published - open access |