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Charge pumping spectroscopy: HfSiON defect study after substrate hot electron injection

dc.contributor.authorToledano-Luque, M.
dc.contributor.authorPantisano, Luigi
dc.contributor.authorDegraeve, Robin
dc.contributor.authorZahid, Mohammed
dc.contributor.authorFerain, Isabelle
dc.contributor.authorSan Andres Serrano, Enrique
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDe Gendt, Stefan
dc.date.accessioned2021-10-16T20:11:45Z
dc.date.available2021-10-16T20:11:45Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12979
dc.sourceIIOimport
dc.titleCharge pumping spectroscopy: HfSiON defect study after substrate hot electron injection
dc.typeJournal article
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage1943
dc.source.endpage1946
dc.source.journalMicroelectronic Engineering
dc.source.issue9_10
dc.source.volume84
imec.availabilityPublished - imec
imec.internalnotesPaper from INFOS 2007


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