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Stress evolution during Ni-Si compound formation for fully silicided (FUSI) gates

dc.contributor.authorTorregiani, Cristina
dc.contributor.authorVan Bockstael, Charlotte
dc.contributor.authorDetavernier, Christophe
dc.contributor.authorLavoie, Christian
dc.contributor.authorLauwers, Anne
dc.contributor.authorKittl, Jorge
dc.date.accessioned2021-10-16T20:13:35Z
dc.date.available2021-10-16T20:13:35Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12984
dc.sourceIIOimport
dc.titleStress evolution during Ni-Si compound formation for fully silicided (FUSI) gates
dc.typeJournal article
dc.contributor.imecauthorLauwers, Anne
dc.source.peerreviewno
dc.source.beginpage2533
dc.source.endpage2536
dc.source.journalMicroelectronic Engineering
dc.contributor.thesisadvisorMaex, Karen
dc.source.issue11
dc.source.volume84
dc.identifier.urlhttp://dx.doi.org/10.1016/j.mee.2007.05.054
imec.availabilityPublished - imec
imec.internalnotesPaper from MAM 2007


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