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Resistance switching of CuTCNQ nanowires developed for high-density memory devices

dc.contributor.authorTurquat, Christian
dc.contributor.authorDemolliens, A.
dc.contributor.authorRazafindramora, J.
dc.contributor.authorMerlen, Alexandre
dc.contributor.authorValmalette, Jean-Christophe
dc.contributor.authorMuller, Christophe
dc.contributor.authorMuller, Robert
dc.contributor.authorGoux, Ludovic
dc.contributor.authorWouters, Dirk
dc.date.accessioned2021-10-16T20:21:09Z
dc.date.available2021-10-16T20:21:09Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13003
dc.sourceIIOimport
dc.titleResistance switching of CuTCNQ nanowires developed for high-density memory devices
dc.typeOral presentation
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.source.peerreviewno
dc.source.conference8th Annual Non-Volatile Memory Technology Symposium
dc.source.conferencedate10/11/2007
dc.source.conferencelocationAlbuquerque, NM USA
imec.availabilityPublished - imec


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