IR-LST a powerful non-invasive tool to observe crystal defects in as-grown silicon, after device processing, and in heteroepitaxial layers
dc.contributor.author | Kissinger, G. | |
dc.contributor.author | Vanhellemont, Jan | |
dc.contributor.author | Gräf, D. | |
dc.contributor.author | Claeys, Cor | |
dc.contributor.author | Richter, H. | |
dc.date.accessioned | 2021-09-29T14:39:23Z | |
dc.date.available | 2021-09-29T14:39:23Z | |
dc.date.issued | 1996 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/1300 | |
dc.source | IIOimport | |
dc.title | IR-LST a powerful non-invasive tool to observe crystal defects in as-grown silicon, after device processing, and in heteroepitaxial layers | |
dc.type | Proceedings paper | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | no | |
dc.source.beginpage | 19 | |
dc.source.endpage | 24 | |
dc.source.conference | Defect Recognition and Image Processing in Semiconductors 1995 - DRIP. Proceedings of the 6th International Conference | |
dc.source.conferencedate | 3/12/1995 | |
dc.source.conferencelocation | Boulder, CO USA | |
imec.availability | Published - open access | |
imec.internalnotes | IOP Conference Series; Vol. 149 |