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dc.contributor.authorKol'dyaev, Victor
dc.contributor.authorClerix, Andre
dc.contributor.authorDeferm, Ludo
dc.date.accessioned2021-09-29T14:40:04Z
dc.date.available2021-09-29T14:40:04Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1305
dc.sourceIIOimport
dc.titleClosed-form frequency dependent gate-to-channel capacitance model for submicron MOSFET's
dc.typeProceedings paper
dc.contributor.imecauthorClerix, Andre
dc.contributor.imecauthorDeferm, Ludo
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage679
dc.source.endpage82
dc.source.conferenceProceedings of the 26th European Solid-State Device Research Conference - ESSDERC
dc.source.conferencedate9/09/1996
dc.source.conferencelocationBologna
imec.availabilityPublished - imec


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