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One junction approach to make deep submicron PMOSFETs for low power applications

dc.contributor.authorKubicek, Stefan
dc.contributor.authorBiesemans, Serge
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-09-29T14:40:55Z
dc.date.available2021-09-29T14:40:55Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1311
dc.sourceIIOimport
dc.titleOne junction approach to make deep submicron PMOSFETs for low power applications
dc.typeProceedings paper
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.imecauthorDe Meyer, Kristin
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage523
dc.source.endpage526
dc.source.conferenceProceedings of the 26th European Solid-State Device Research Conference - ESSDERC
dc.source.conferencedate9/09/1996
dc.source.conferencelocationBologna Italy
imec.availabilityPublished - open access


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