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Titanium silicidation and secondary defect annihilation in ion beam processed SiGe layers

dc.contributor.authorKyllesbech Larsen, K.
dc.contributor.authorLa Via, F.
dc.contributor.authorLombardo, S.
dc.contributor.authorRaineri, Vito
dc.contributor.authorAlves Donaton, Ricardo
dc.contributor.authorCampisano, S. U.
dc.date.accessioned2021-09-29T14:41:21Z
dc.date.available2021-09-29T14:41:21Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1314
dc.sourceIIOimport
dc.titleTitanium silicidation and secondary defect annihilation in ion beam processed SiGe layers
dc.typeProceedings paper
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage149
dc.source.endpage154
dc.source.conferenceSilicide Thin Films - Fabrication, Properties, and Applications
dc.source.conferencedate27/11/1995
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - open access
imec.internalnotesMRS Symposium Proceedings; Vol. 402


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