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Reliability degradation of HfSiO gate dielectric layers: influence of nitridation

dc.contributor.authorVellianitis, G.
dc.contributor.authorPetry, Jasmine
dc.contributor.authorHooker, Jacob
dc.contributor.authorDelabie, Annelies
dc.contributor.authorDe Gendt, Stefan
dc.date.accessioned2021-10-16T21:15:14Z
dc.date.available2021-10-16T21:15:14Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13153
dc.sourceIIOimport
dc.titleReliability degradation of HfSiO gate dielectric layers: influence of nitridation
dc.typeJournal article
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage1972
dc.source.endpage1975
dc.source.journalMicroelectronic Engineering
dc.source.issue9_10
dc.source.volume84
imec.availabilityPublished - imec
imec.internalnotesINFOS


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