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Achieving Low-VT Ni-FUSI CMOS by ultra-thin Dy2O3 capping of hafnium silicate dielectrics

dc.contributor.authorVeloso, Anabela
dc.contributor.authorYu, HongYu
dc.contributor.authorChang, S.Z.
dc.contributor.authorAdelmann, Chris
dc.contributor.authorOnsia, Bart
dc.contributor.authorBrus, Stephan
dc.date.accessioned2021-10-16T21:18:00Z
dc.date.available2021-10-16T21:18:00Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13158
dc.sourceIIOimport
dc.titleAchieving Low-VT Ni-FUSI CMOS by ultra-thin Dy2O3 capping of hafnium silicate dielectrics
dc.typeJournal article
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorOnsia, Bart
dc.contributor.imecauthorBrus, Stephan
dc.source.peerreviewno
dc.source.beginpage980
dc.source.endpage983
dc.source.journalIEEE Electron Device Letters
dc.source.issue11
dc.source.volume28
imec.availabilityPublished - imec


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