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Post salicidation clean: selective removal of un-reacted NiPt towards NiPtSi(Ge)

dc.contributor.authorXu, Kaidong
dc.contributor.authorLauwers, Anne
dc.contributor.authorVos, Rita
dc.contributor.authorArcher, L.
dc.contributor.authorKraus, Harald
dc.contributor.authorDemeurisse, Caroline
dc.contributor.authorMertens, Sofie
dc.contributor.authorMertens, Paul
dc.contributor.authorHenry, Sally-Ann
dc.contributor.authorGale, G.
dc.contributor.authorKovacs, F
dc.contributor.authorDalmer, M.
dc.contributor.authorGaulhofer, E
dc.date.accessioned2021-10-16T21:49:18Z
dc.date.available2021-10-16T21:49:18Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13239
dc.sourceIIOimport
dc.titlePost salicidation clean: selective removal of un-reacted NiPt towards NiPtSi(Ge)
dc.typeProceedings paper
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorVos, Rita
dc.contributor.imecauthorDemeurisse, Caroline
dc.contributor.imecauthorMertens, Sofie
dc.contributor.imecauthorMertens, Paul
dc.contributor.orcidimecMertens, Sofie::0000-0002-1482-6730
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage327
dc.source.endpage334
dc.source.conferenceCleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing 10
dc.source.conferencedate7/10/2007
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - open access
imec.internalnotesECS Trans.; Vol. 11, nr. 2


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