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Modifications of porous low-k by plasma treatments and wet cleans

dc.contributor.authorXu, Kaidong
dc.contributor.authorVereecke, Guy
dc.contributor.authorKesters, Els
dc.contributor.authorLe, Quoc Toan
dc.contributor.authorLux, Marcel
dc.contributor.authorHenry, Sally-Ann
dc.contributor.authorKraus, Harald
dc.contributor.authorArcher, L.
dc.contributor.authorMertens, Paul
dc.contributor.authorKovacs, F
dc.contributor.authorDalmer, M
dc.contributor.authorGaulhofer, E
dc.contributor.authorLuo, S.J.
dc.contributor.authorHan, Q.Y.
dc.contributor.authorBerry, I.
dc.date.accessioned2021-10-16T21:49:47Z
dc.date.available2021-10-16T21:49:47Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13240
dc.sourceIIOimport
dc.titleModifications of porous low-k by plasma treatments and wet cleans
dc.typeProceedings paper
dc.contributor.imecauthorVereecke, Guy
dc.contributor.imecauthorKesters, Els
dc.contributor.imecauthorLe, Quoc Toan
dc.contributor.imecauthorLux, Marcel
dc.contributor.imecauthorMertens, Paul
dc.contributor.orcidimecVereecke, Guy::0000-0001-9058-9338
dc.contributor.orcidimecLe, Quoc Toan::0000-0002-0206-6279
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage409
dc.source.endpage416
dc.source.conferenceCleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing 10
dc.source.conferencedate7/10/2007
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - open access
imec.internalnotesECS Trans.; Vol. 11, iss. 2


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