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dc.contributor.authorYu, HongYu
dc.contributor.authorLauwers, Anne
dc.contributor.authorDemeurisse, Caroline
dc.contributor.authorRichard, Olivier
dc.contributor.authorMertens, Sofie
dc.contributor.authorOpsomer, Karl
dc.contributor.authorSinganamalla, Raghunath
dc.contributor.authorRosseel, Erik
dc.contributor.authorAbsil, Philippe
dc.contributor.authorBiesemans, Serge
dc.date.accessioned2021-10-16T21:55:05Z
dc.date.available2021-10-16T21:55:05Z
dc.date.issued2007-02
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13252
dc.sourceIIOimport
dc.titleElectrical properties of n-MOSFETs using the NiSi:Yb FUSI electrode
dc.typeJournal article
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorDemeurisse, Caroline
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorMertens, Sofie
dc.contributor.imecauthorOpsomer, Karl
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecMertens, Sofie::0000-0002-1482-6730
dc.source.peerreviewno
dc.source.beginpage154
dc.source.endpage156
dc.source.journalIEEE Electron Device Letters
dc.source.issue2
dc.source.volume28
imec.availabilityPublished - imec


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