dc.contributor.author | Yu, HongYu | |
dc.contributor.author | Lauwers, Anne | |
dc.contributor.author | Demeurisse, Caroline | |
dc.contributor.author | Richard, Olivier | |
dc.contributor.author | Mertens, Sofie | |
dc.contributor.author | Opsomer, Karl | |
dc.contributor.author | Singanamalla, Raghunath | |
dc.contributor.author | Rosseel, Erik | |
dc.contributor.author | Absil, Philippe | |
dc.contributor.author | Biesemans, Serge | |
dc.date.accessioned | 2021-10-16T21:55:05Z | |
dc.date.available | 2021-10-16T21:55:05Z | |
dc.date.issued | 2007-02 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/13252 | |
dc.source | IIOimport | |
dc.title | Electrical properties of n-MOSFETs using the NiSi:Yb FUSI electrode | |
dc.type | Journal article | |
dc.contributor.imecauthor | Lauwers, Anne | |
dc.contributor.imecauthor | Demeurisse, Caroline | |
dc.contributor.imecauthor | Richard, Olivier | |
dc.contributor.imecauthor | Mertens, Sofie | |
dc.contributor.imecauthor | Opsomer, Karl | |
dc.contributor.imecauthor | Rosseel, Erik | |
dc.contributor.imecauthor | Absil, Philippe | |
dc.contributor.imecauthor | Biesemans, Serge | |
dc.contributor.orcidimec | Richard, Olivier::0000-0002-3994-8021 | |
dc.contributor.orcidimec | Mertens, Sofie::0000-0002-1482-6730 | |
dc.source.peerreview | no | |
dc.source.beginpage | 154 | |
dc.source.endpage | 156 | |
dc.source.journal | IEEE Electron Device Letters | |
dc.source.issue | 2 | |
dc.source.volume | 28 | |
imec.availability | Published - imec | |