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Instability and defects in gate dielectric: similarity and differences between Hf-stacks and SiO2

dc.contributor.authorZhang, J.F.
dc.contributor.authorZhao, C.Z.
dc.contributor.authorChang, M.H.
dc.contributor.authorZhang, W.
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorPantisano, Luigi
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-16T21:58:48Z
dc.date.available2021-10-16T21:58:48Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13261
dc.sourceIIOimport
dc.titleInstability and defects in gate dielectric: similarity and differences between Hf-stacks and SiO2
dc.typeProceedings paper
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage219
dc.source.endpage233
dc.source.conferencePhysics and Technology of High-k Dielectrics
dc.source.conferencedate7/10/2007
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - open access
imec.internalnotesECS Trans.; Vol. 11, Nr. 4


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