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Reactive ion etch of Si3N4 spacers high selective to germanium

dc.contributor.authorAltamirano Sanchez, Efrain
dc.contributor.authorKunnen, Eddy
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorBoullart, Werner
dc.date.accessioned2021-10-17T06:13:36Z
dc.date.available2021-10-17T06:13:36Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13298
dc.sourceIIOimport
dc.titleReactive ion etch of Si3N4 spacers high selective to germanium
dc.typeProceedings paper
dc.contributor.imecauthorAltamirano Sanchez, Efrain
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorBoullart, Werner
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.source.peerreviewno
dc.source.beginpage147
dc.source.endpage152
dc.source.conferenceSiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices
dc.source.conferencedate12/10/2008
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 16, Issue 10


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