Publication:
SiCP selective epitaxial growth in recessed source/drain regions yielding to drive current enhancement in n-channel MOSFET
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1881 since deposited on 2021-10-17
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Acq. date: 2026-08-02
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1881 since deposited on 2021-10-17
2last month
2last week
Acq. date: 2026-08-02
Citations