Publication:
SiCP selective epitaxial growth in recessed source/drain regions yielding to drive current enhancement in n-channel MOSFET
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1877 since deposited on 2021-10-17
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Acq. date: 2026-02-25
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1877 since deposited on 2021-10-17
1last month
1last week
Acq. date: 2026-02-25
Citations