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Passivation of (100)Ge/GeO2/high-k gate stacks using thermal oxide treatments

dc.contributor.authorBellenger, Florence
dc.contributor.authorHoussa, Michel
dc.contributor.authorDelabie, Annelies
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorConard, Thierry
dc.contributor.authorCaymax, Matty
dc.contributor.authorMeuris, Marc
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-17T06:16:34Z
dc.date.available2021-10-17T06:16:34Z
dc.date.issued2008
dc.identifier.issn0013-4651
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13365
dc.sourceIIOimport
dc.titlePassivation of (100)Ge/GeO2/high-k gate stacks using thermal oxide treatments
dc.typeJournal article
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpageG33
dc.source.endpageG38
dc.source.journalJournal of the Electrochemical Society
dc.source.issue2
dc.source.volume155
imec.availabilityPublished - open access


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