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Interface properties improvement of Ge/Al2O3 and Ge/GeO2/Al2O3 gate stacks using molecular beam deposition

dc.contributor.authorBellenger, Florence
dc.contributor.authorMerckling, Clement
dc.contributor.authorPenaud, Julien
dc.contributor.authorHoussa, Michel
dc.contributor.authorCaymax, Matty
dc.contributor.authorMeuris, Marc
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-17T06:16:42Z
dc.date.available2021-10-17T06:16:42Z
dc.date.issued2008-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13367
dc.sourceIIOimport
dc.titleInterface properties improvement of Ge/Al2O3 and Ge/GeO2/Al2O3 gate stacks using molecular beam deposition
dc.typeProceedings paper
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage411
dc.source.endpage422
dc.source.conferencePhysics and Technology of High-k Dielectrics 6
dc.source.conferencedate12/10/2008
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 16, Issue 5


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