Integration of dual work function CMOS using doped high-K dielectric and metal gates to achieve improved power-performance

dc.contributor.author	Biesemans, Serge
dc.date.accessioned	2021-10-17T06:18:25Z
dc.date.available	2021-10-17T06:18:25Z
dc.date.issued	2008
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/13393
dc.source	IIOimport
dc.title	Integration of dual work function CMOS using doped high-K dielectric and metal gates to achieve improved power-performance
dc.type	Oral presentation
dc.contributor.imecauthor	Biesemans, Serge
dc.date.embargo	9999-12-31
dc.source.peerreview	no
dc.source.conference	International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology - IWDTF
dc.source.conferencedate	5/11/2008
dc.source.conferencelocation	Tokyo Japan
imec.availability	Published - open access