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Stress simulation of embedded Si1-yCy source/drain nMOSFETs

dc.contributor.authorBiswas, Abhijit
dc.contributor.authorBargallo Gonzalez, Mireia
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorSimoen, Eddy
dc.contributor.authorEneman, Geert
dc.contributor.authorVerheyen, Peter
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-17T06:18:46Z
dc.date.available2021-10-17T06:18:46Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13397
dc.sourceIIOimport
dc.titleStress simulation of embedded Si1-yCy source/drain nMOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.source.peerreviewno
dc.source.beginpage88
dc.source.endpage92
dc.source.conferenceSemiconductor Technology - ISTC 2008
dc.source.conferencedate15/03/2008
dc.source.conferencelocationShanghai China
imec.availabilityPublished - imec


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