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Recombination probabilities of O and H atoms on the surface of nanoporous Low-k SiCOH dielectrics

dc.contributor.authorBraginsky, O.V.
dc.contributor.authorKovalev, A.S.
dc.contributor.authorLopaev, D.V.
dc.contributor.authorMalykhin, E.M.
dc.contributor.authorMankelevich, Y.A.
dc.contributor.authorRakhimova, T.V.
dc.contributor.authorRakhimov, A.T.
dc.contributor.authorVasilieva, A.N.
dc.contributor.authorZyryanov, S.M.
dc.contributor.authorBaklanov, Mikhaïl
dc.date.accessioned2021-10-17T06:22:34Z
dc.date.available2021-10-17T06:22:34Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13441
dc.sourceIIOimport
dc.titleRecombination probabilities of O and H atoms on the surface of nanoporous Low-k SiCOH dielectrics
dc.typeMeeting abstract
dc.source.peerreviewno
dc.source.beginpage38
dc.source.endpage39
dc.source.conferenceADMETA: Advanced Metallization Conference
dc.source.conferencedate8/10/2008
dc.source.conferencelocationTokyo Japan
imec.availabilityPublished - imec


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