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Simultaneous optimization of the material properties, uniformity and deposition rate of polycrystalline CVD And PECVD silicon-germanium layers for MEMS applications

dc.contributor.authorBryce, George
dc.contributor.authorSeveri, Simone
dc.contributor.authorDu Bois, Bert
dc.contributor.authorWillegems, Myriam
dc.contributor.authorClaes, Gert
dc.contributor.authorVan Hoof, Rita
dc.contributor.authorHaspeslagh, Luc
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorWitvrouw, Ann
dc.date.accessioned2021-10-17T06:25:07Z
dc.date.available2021-10-17T06:25:07Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13464
dc.sourceIIOimport
dc.titleSimultaneous optimization of the material properties, uniformity and deposition rate of polycrystalline CVD And PECVD silicon-germanium layers for MEMS applications
dc.typeProceedings paper
dc.contributor.imecauthorBryce, George
dc.contributor.imecauthorSeveri, Simone
dc.contributor.imecauthorDu Bois, Bert
dc.contributor.imecauthorWillegems, Myriam
dc.contributor.imecauthorVan Hoof, Rita
dc.contributor.imecauthorHaspeslagh, Luc
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDu Bois, Bert::0000-0003-0147-1296
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewno
dc.source.beginpage353
dc.source.endpage364
dc.source.conferenceSiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices
dc.source.conferencedate12/10/2008
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 16, Issue 10


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