Improvement of He ion induced SiGe layer relaxation by a thin Si:C layer

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Authors
Buca, D.; Trinkaus, H.; Holländer, B.; Loo, Roger; Nguyen, Duy; Mantl, S.
Conference
4th International SiGe Technology and Device Meeting
Title
Improvement of He ion induced SiGe layer relaxation by a thin Si:C layer
Publication type
Proceedings paper
Embargo date
9999-12-31
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