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Si passivation in Ge pMOSFETS: further developments and understanding

dc.contributor.authorCaymax, Matty
dc.contributor.authorMitard, Jerome
dc.contributor.authorMartens, Koen
dc.contributor.authorYang, Lijun
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorMeuris, Marc
dc.date.accessioned2021-10-17T06:27:54Z
dc.date.available2021-10-17T06:27:54Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13489
dc.sourceIIOimport
dc.titleSi passivation in Ge pMOSFETS: further developments and understanding
dc.typeProceedings paper
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewno
dc.source.conference4th International Workshop on New Group IV Semiconductor Nanoelectronics
dc.source.conferencedate25/09/2008
dc.source.conferencelocationSendai Japan
imec.availabilityPublished - imec


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