Change Of H-termination on wet cleaned Si9100) and Ge(100) by heat treatment In H2 or Ar
dc.contributor.author | Caymax, Matty | |
dc.contributor.author | Uto, Atsushi | |
dc.contributor.author | Sakuraba, Masao | |
dc.contributor.author | Murota, Junichi | |
dc.date.accessioned | 2021-10-17T06:28:01Z | |
dc.date.available | 2021-10-17T06:28:01Z | |
dc.date.issued | 2008 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/13490 | |
dc.source | IIOimport | |
dc.title | Change Of H-termination on wet cleaned Si9100) and Ge(100) by heat treatment In H2 or Ar | |
dc.type | Meeting abstract | |
dc.contributor.imecauthor | Caymax, Matty | |
dc.source.peerreview | no | |
dc.source.beginpage | 231 | |
dc.source.endpage | 232 | |
dc.source.conference | 4th International SiGe Technology And Device Meeting | |
dc.source.conferencedate | 11/05/2008 | |
dc.source.conferencelocation | Hsinchu Taiwan | |
imec.availability | Published - imec | |
imec.internalnotes | Abstract Book. Full Paper Proceedings is pending |
Files in this item
Files | Size | Format | View |
---|---|---|---|
There are no files associated with this item. |