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dc.contributor.authorChang, Kao-Shuo
dc.contributor.authorGreen, Martin L.
dc.contributor.authorHattrick-Simpers, Jason R.
dc.contributor.authorTakeuchi, Ichiro
dc.contributor.authorSuehle, John S.
dc.contributor.authorCelik, Ozgur
dc.contributor.authorDe Gendt, Stefan
dc.date.accessioned2021-10-17T06:28:51Z
dc.date.available2021-10-17T06:28:51Z
dc.date.issued2008-10
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13497
dc.sourceIIOimport
dc.titleDetermination of work functions in the Ta1-xAlxNy/HfO2 advanced gate stack using combinatorial methodology
dc.typeJournal article
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewyes
dc.source.beginpage2641
dc.source.endpage2647
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume55
imec.availabilityPublished - imec


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