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Electrical properties of low-VT metal-gated n-MOSFETs using La2O3/SiOx as interfacial layer between HfLaO high-k dielectrics and Si channel

dc.contributor.authorChang, Shou-Zen
dc.contributor.authorYu, Hong-Yu
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorDelabie, Annelies
dc.contributor.authorWang, Xin Peng
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorAkheyar, Amal
dc.contributor.authorNyns, Laura
dc.contributor.authorSwerts, Johan
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorKerner, Christoph
dc.contributor.authorAbsil, Philippe
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorBiesemans, Serge
dc.date.accessioned2021-10-17T06:29:11Z
dc.date.available2021-10-17T06:29:11Z
dc.date.issued2008-05
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13499
dc.sourceIIOimport
dc.titleElectrical properties of low-VT metal-gated n-MOSFETs using La2O3/SiOx as interfacial layer between HfLaO high-k dielectrics and Si channel
dc.typeJournal article
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorKerner, Christoph
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.source.peerreviewyes
dc.source.beginpage430
dc.source.endpage433
dc.source.journalIEEE Electron Device Letters
dc.source.issue5
dc.source.volume29
imec.availabilityPublished - imec


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