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High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy

dc.contributor.authorCheng, Kai
dc.contributor.authorLeys, Maarten
dc.contributor.authorDegroote, Stefan
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-17T06:30:03Z
dc.date.available2021-10-17T06:30:03Z
dc.date.issued2008
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13506
dc.sourceIIOimport
dc.titleHigh quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy
dc.typeJournal article
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewyes
dc.source.beginpage192111
dc.source.journalApplied Physics Letters
dc.source.issue19
dc.source.volume92
imec.availabilityPublished - imec


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