Publication:
High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy
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1824 since deposited on 2021-10-17
2last month
Acq. date: 2026-01-11
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Views
1824 since deposited on 2021-10-17
2last month
Acq. date: 2026-01-11
Citations