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High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy

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1827 since deposited on 2021-10-17
2last month
Acq. date: 2026-08-28

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Views

1827 since deposited on 2021-10-17
2last month
Acq. date: 2026-08-28

Citations