Publication:
High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy
Date
| dc.contributor.author | Cheng, Kai | |
| dc.contributor.author | Leys, Maarten | |
| dc.contributor.author | Degroote, Stefan | |
| dc.contributor.author | Germain, Marianne | |
| dc.contributor.author | Borghs, Gustaaf | |
| dc.contributor.imecauthor | Borghs, Gustaaf | |
| dc.date.accessioned | 2021-10-17T06:30:03Z | |
| dc.date.available | 2021-10-17T06:30:03Z | |
| dc.date.issued | 2008 | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/13506 | |
| dc.source.beginpage | 192111 | |
| dc.source.issue | 19 | |
| dc.source.journal | Applied Physics Letters | |
| dc.source.volume | 92 | |
| dc.title | High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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