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Thick crack-free n-type GaN grown on 4 inch silicon(111) substrates by MOVPE

dc.contributor.authorCheng, Kai
dc.contributor.authorLeys, Maarten
dc.contributor.authorMotsnyi, Vasyl
dc.contributor.authorDerluyn, Joff
dc.contributor.authorDegroote, Stefan
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-17T06:30:21Z
dc.date.available2021-10-17T06:30:21Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13508
dc.sourceIIOimport
dc.titleThick crack-free n-type GaN grown on 4 inch silicon(111) substrates by MOVPE
dc.typeProceedings paper
dc.contributor.imecauthorMotsnyi, Vasyl
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecMotsnyi, Vasyl::0000-0001-5297-9298
dc.source.peerreviewyes
dc.source.conference14th International Conference of Metalorganic Vapor Phase Epitaxy - ICMOVPE XIV
dc.source.conferencedate1/06/2008
dc.source.conferencelocationMetz France
imec.availabilityPublished - imec


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