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Approaching Fermi level unpinning in oxide-In0.2Ga0.8As

dc.contributor.authorChiang, T.H.
dc.contributor.authorLee, W.C.
dc.contributor.authorLin, T.D.
dc.contributor.authorLin, Dennis
dc.contributor.authorShiu, K.H.
dc.contributor.authorKwo, J.
dc.contributor.authorWang, W.E.
dc.contributor.authorTsai, W.
dc.contributor.authorHong, M.
dc.date.accessioned2021-10-17T06:31:30Z
dc.date.available2021-10-17T06:31:30Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13517
dc.sourceIIOimport
dc.titleApproaching Fermi level unpinning in oxide-In0.2Ga0.8As
dc.typeProceedings paper
dc.contributor.imecauthorLin, Dennis
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage375
dc.source.endpage378
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate15/12/2008
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access


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