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dc.contributor.authorCho, Hag-Ju
dc.contributor.authorYu, Hong Yu
dc.contributor.authorChang, Vincent S.
dc.contributor.authorAkheyar, Amal
dc.contributor.authorJakschik, Stefan
dc.contributor.authorConard, Thierry
dc.contributor.authorHantschel, Thomas
dc.contributor.authorDelabie, Annelies
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorSchram, Tom
dc.contributor.authorAbsil, Philippe
dc.contributor.authorBiesemans, Serge
dc.date.accessioned2021-10-17T06:31:49Z
dc.date.available2021-10-17T06:31:49Z
dc.date.issued2008-07
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13519
dc.sourceIIOimport
dc.titleThe impact of stacked cap layers on effective work function with HfSiON and SiON gate dielectrics
dc.typeJournal article
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorHantschel, Thomas
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecHantschel, Thomas::0000-0001-9476-4084
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.source.peerreviewyes
dc.source.beginpage743
dc.source.endpage745
dc.source.journalIEEE Electron Device Letters
dc.source.issue7
dc.source.volume29
dc.identifier.urlhttp://ieeexplore.ieee.org/iel5/55/4558060/04558118.pdf?tp=&isnumber=4558060&arnumber=4558118&punumber=55
imec.availabilityPublished - imec


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