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GaN technology on high-resistivity Si-substrates for high-power-amplifiers

dc.contributor.authorDas, Jo
dc.contributor.authorDerluyn, Joff
dc.contributor.authorLorenz, Anne
dc.contributor.authorOprins, Herman
dc.contributor.authorXiao, Dongping
dc.contributor.authorDe Raedt, Walter
dc.contributor.authorCheng, Kai
dc.contributor.authorLeys, Maarten
dc.contributor.authorDegroote, Stefan
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-17T06:41:49Z
dc.date.available2021-10-17T06:41:49Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13586
dc.sourceIIOimport
dc.titleGaN technology on high-resistivity Si-substrates for high-power-amplifiers
dc.typeProceedings paper
dc.contributor.imecauthorOprins, Herman
dc.contributor.imecauthorDe Raedt, Walter
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecOprins, Herman::0000-0003-0680-4969
dc.contributor.orcidimecDe Raedt, Walter::0000-0002-7117-7976
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conferenceESA Microwave Technology and Techniques Workshop
dc.source.conferencedate6/05/2008
dc.source.conferencelocationNoordwijk Netherlands
imec.availabilityPublished - open access


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