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Extended defects created by light ion implantation in Germanium

dc.contributor.authorDavid, M.L.
dc.contributor.authorBarbot, J.F.
dc.contributor.authorRousselet, S.
dc.contributor.authorPailloux, F.
dc.contributor.authorBabonneau, D.
dc.contributor.authorBeaufort, M.F.
dc.contributor.authorPizzagali, L.
dc.contributor.authorDrouet, M.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-17T06:41:59Z
dc.date.available2021-10-17T06:41:59Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13587
dc.sourceIIOimport
dc.titleExtended defects created by light ion implantation in Germanium
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage163
dc.source.endpage175
dc.source.conferenceHigh Purity Silicon 10
dc.source.conferencedate12/10/2008
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 16; Issue 6


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