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Comparison of defects created by plasma-based ion implantation and conventional implantation of hydrogen in germanium

dc.contributor.authorDavid, M.L.
dc.contributor.authorPailloux, F.
dc.contributor.authorDrouet, M.
dc.contributor.authorBeaufort, M.F.
dc.contributor.authorBarbot, J.F.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-17T06:42:17Z
dc.date.available2021-10-17T06:42:17Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13589
dc.sourceIIOimport
dc.titleComparison of defects created by plasma-based ion implantation and conventional implantation of hydrogen in germanium
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage101
dc.source.endpage106
dc.source.conferenceGettering and Defect Engineering in Semiconductor Technology XII
dc.source.conferencedate14/10/2007
dc.source.conferencelocationErice Italy
imec.availabilityPublished - open access
imec.internalnotesSolid State Phenomena; Vols. 131-133


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