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Analog operation of uniaxially and biaxially strained FD SOI nMOSFETs at cryogenic temperatures

dc.contributor.authorde Souza, M.
dc.contributor.authorMartino, J.A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorPavanello, M.A.
dc.date.accessioned2021-10-17T06:47:12Z
dc.date.available2021-10-17T06:47:12Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13620
dc.sourceIIOimport
dc.titleAnalog operation of uniaxially and biaxially strained FD SOI nMOSFETs at cryogenic temperatures
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage77
dc.source.endpage78
dc.source.conferenceEUROSOI Workshop Proceedings: 4th Workshop of the Thematic Network on Silicon-on-Insulator Technology, Devices and Circuits
dc.source.conferencedate23/01/2008
dc.source.conferencelocationCork Ireland
imec.availabilityPublished - open access


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