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Power performance of AlGaN/GaN HEMT's grown on 6'' Si substrates

dc.contributor.authorDerluyn, Joff
dc.contributor.authorDas, Jo
dc.contributor.authorCheng, Kai
dc.contributor.authorLorenz, Anne
dc.contributor.authorVisalli, Domenica
dc.contributor.authorDegroote, Stefan
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-17T06:53:42Z
dc.date.available2021-10-17T06:53:42Z
dc.date.issued2008-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13657
dc.sourceIIOimport
dc.titlePower performance of AlGaN/GaN HEMT's grown on 6'' Si substrates
dc.typeProceedings paper
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewyes
dc.source.beginpageC4-02
dc.source.conferenceAdvances in GaN, GaAs, SiC, and Related Alloys on Silicon Substrates
dc.source.conferencedate24/03/2008
dc.source.conferencelocationSan Francisco, CA USA
dc.identifier.urlhttp://www.mrs.org/s_mrs/sec_subscribe.asp?CID=12454&DID=205529
imec.availabilityPublished - imec
imec.internalnotesMRS Symposium Proceedings; Vol. 1068


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