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Channel backscattering characteristics of high performance germanium pMOSFETs

dc.contributor.authorDobbie, Andrew
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorMeuris, Marc
dc.contributor.authorWhall, T.E
dc.contributor.authorLeadley, D.R
dc.date.accessioned2021-10-17T06:55:48Z
dc.date.available2021-10-17T06:55:48Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13669
dc.sourceIIOimport
dc.titleChannel backscattering characteristics of high performance germanium pMOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage7
dc.source.endpage10
dc.source.conference9th International Conference on ULtimate Integration on Silicon - ULIS
dc.source.conferencedate12/03/2008
dc.source.conferencelocationUdine Italy
imec.availabilityPublished - open access


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